49 (1999), č. 5

 

Contributions of the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, 15–17 June 1998 

Yi LUO, Linag-Hui CHEN, Tomg-Ning LI
InP-based optoelectronic devices for optical fiber communications. /751-756/

J. NOVOTNÝ, O. PROCHÁZKOVÁ, K. ŽĎÁNSKÝ, J. ZAVADIL
Preparation and properties of Er and Yb doped InP-based semiconductor compounds. /757-763/ 

J. ZAVADIL, K. ŽĎÁNSKÝ, O. PROCHÁZKOVÁ
Electro-optical properties of InP epitaxial layers grown with rare-earth admixture. /765-774/

J. BLUDSKÁ, I. JAKUBEC, D. NOHAVICA, L. PEKÁREK
Hydrogen photoevolution on InGaP polycrystalline and tandem-type electrodes./775-781/

F. ŠROBÁR
A diagrammatic method for analysis of GaAs and InP based optoelectronic devices. /783-789/

Jinzhong YU, Lianghui CHEN, Xiaoyu MA, Qiming WANG
AlGaInP visible quantum well lasers for information technology. /791-796/

D. NOHAVICA, P. GLADKOV, K. ŽĎÁNSKÝ
Preparation and properties of thick not intentionally doped GaInP(As)/GaAs layers for optoelectronic applications. /797-804/ 

A. HOSPODKOVÁ, E. HULICIUS, J. OSWALD, J. PANGRÁC, K. MELICHAR, T. ŠIMEČEK
Strained InxGa1-xAs/GaAs multiple quantum wells grown by MOVPE. /805-811/

K. ŽĎÁNSKÝ, I. HAWKINS
Slow decay of photoconductivity caused by tin-related DX centers in AlGaAs./813-821/

P. GLADKOV, J. WEBER
Low temperature photoluminescence properties of p- and a-type AlxGa1-xAs for x > 0. 42. /823-832/

J. WALLACHOVÁ, J. ZELINKA, J. VANIŠ, S. KARAMAZOV, M. CUKR, P. ZICH, D. H. CHOW, T. C. McGILL
Testing of resonant tunneling double barrier heterostructures by BEEM/BEES./833-836/

Qiming WANG, QinQing YANG, Yuqing ZHU, Junjie SI, Yuliang LIU, Hongbing LEI, Buwen CHENG, Jinzhong YU
Si-based optoelectronic devices and their attractive applications. /837-848/

Shioyng LIU, Jingsong HUANG, Zhiyuan XIE, Baijun CHEN, Yue WANG, Jiacong SHEN
Organic electroluminescence devices and their applications. /849-858/

S. NEŠPŮREK
Poly(organylsilylene)s – perspective materials for optoelectronics. /859-870/

F. SCHAUER
Space-charge-limited transient photoconductivity in polymers. /871-882/

V. MATĚJEC, M. CHOMÁT, M. HAYER, I. KAŠÍK, D. BERKOVÁ, F. ABDELMALEK, N. JAFFREZIC-RENAULT
Development of special optical fibres for evanescent-wave chemical sensing./883-888/

J. KAŇKA, P. PETERKA, P. HONZÁTKO, V. MATĚJEC, I. KAŠÍK
Er-doped twin-core fibre coupler as a saturable-absorber-based narrow-band filter for fibre lasers. /889-894/

M. KARÁSEK
Optimum design of erbium-ytterbium codoped fibres for large-signal high-pump-power applications. /895-907/

Contributions of the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, 15–17 June 1998   Yi LUO, Linag-Hui CHEN, Tomg-Ning LI InP-based optoelectronic devices for optical fiber communications. /751-756/ J. NOVOTNÝ, O. PROCHÁZKOVÁ, K. ŽĎÁNSKÝ, J. ZAVADIL Preparation and properties of Er and Yb doped InP-based semiconductor compounds. /757-763/ J. ZAVADIL, K. ŽĎÁNSKÝ, O. PROCHÁZKOVÁ Electro-optical properties of InP epitaxial layers grown with rare-earth admixture. /765-774/ J. BLUDSKÁ, I. JAKUBEC, D. NOHAVICA, L. PEKÁREK Hydrogen photoevolution on InGaP polycrystalline and tandem-type electrodes. /775-781/ F. ŠROBÁR A diagrammatic method for analysis of GaAs and InP based optoelectronic devices. /783-789/ Jinzhong YU, Lianghui CHEN, Xiaoyu MA, Qiming WANG AlGaInP visible quantum well lasers for information technology. /791-796/ D. NOHAVICA, P. GLADKOV, K. ŽĎÁNSKÝ Preparation and properties of thick not intentionally doped GaInP(As)/GaAs layers for optoelectronic applications. /797-804/ A. HOSPODKOVÁ, E. HULICIUS, J. OSWALD, J. PANGRÁC, K. MELICHAR, T. ŠIMEČEK Strained InxGa1-xAs/GaAs multiple quantum wells grown by MOVPE. /805-811/ K. ŽĎÁNSKÝ, I. HAWKINS Slow decay of photoconductivity caused by tin-related DX centers in AlGaAs. /813-821/ P. GLADKOV, J. WEBER Low temperature photoluminescence properties of p- and a-type AlxGa1-xAs for x > 0. 42. /823-832/ J. WALLACHOVÁ, J. ZELINKA, J. VANIŠ, S. KARAMAZOV, M. CUKR, P. ZICH, D. H. CHOW, T. C. McGILL Testing of resonant tunneling double barrier heterostructures by BEEM/BEES. /833-836/ Qiming WANG, QinQing YANG, Yuqing ZHU, Junjie SI, Yuliang LIU, Hongbing LEI, Buwen CHENG, Jinzhong YU Si-based optoelectronic devices and their attractive applications. /837-848/ Shioyng LIU, Jingsong HUANG, Zhiyuan XIE, Baijun CHEN, Yue WANG, Jiacong SHEN Organic electroluminescence devices and their applications. /849-858/ S. NEŠPŮREK Poly(organylsilylene)s – perspective materials for optoelectronics. /859-870/ F. SCHAUER Space-charge-limited transient photoconductivity in polymers. /871-882/ V. MATĚJEC, M. CHOMÁT, M. HAYER, I. KAŠÍK, D. BERKOVÁ, F. ABDELMALEK, N. JAFFREZIC-RENAULT Development of special optical fibres for evanescent-wave chemical sensing. /883-888/ J. KAŇKA, P. PETERKA, P. HONZÁTKO, V. MATĚJEC, I. KAŠÍK Er-doped twin-core fibre coupler as a saturable-absorber-based narrow-band filter for fibre lasers. /889-894/ M. KARÁSEK Optimum design of erbium-ytterbium codoped fibres for large-signal high-pump-power applications. /895-907/